Transistor de efecto de campo de alta presión - Centro de productos

Modelo	Pd (mW)	Identificación (A)	Vgs	Vds (V)	Paquete
SK05N120B-TF	—	—	±30	1200 V	TO-220F
SK12N80B-T	160 mW	—	±30	800 V	TO-220
SK04N65B-T1	86 mW	—	±30	650 V	TO-251
SK03N150-T3F	—	—	±30	1500 V	TO-3PF
SK20N50A-T7	275 mW	—	±30	500 V	TO-247
SK09N150-T7	—	—	±30	1500 V	TO-247
SK03N150-T7	—	—	±30	1500 V	TO-247
SK20N65A-TF	65 mW	—	±30	650 V	TO-220F
SK20N50-TF	60 mW	—	±30	500 V	TO-220F
SK14N80B-TF	77 mW	—	±30	800 V	TO-220F
SK12N80B-TF	55 mW	—	±30	800 V	TO-220F
SK12N65B-TF	73 mW	—	±30	650 V	TO-220F
SK10N80B-TF	55 mW	—	±30	800 V	TO-220F
SK10N70B-TF	51 mW	—	±30	700 V	TO-220F
SK10N65B-TF	45 mW	—	±30	650 V	TO-220F
SK10N65E-TF	42 mW	—	±30	650 V	TO-220F
SK08N65B-TF	42 mW	—	±30	650 V	TO-220F
SK07N80B-TF	40 mW	—	±30	800 V	TO-220F
SK07N65B-TF	42 mW	—	±30	650 V	TO-220F
SK06N90B-TF	45 mW	—	±30	900 V	TO-220F